GaNFast™ Power IC

A gallium nitride (GaN) power integrated circuit (IC) combines several power electronics functions onto a single GaN chip, to improve speed, efficiency, reliability and cost-effectiveness. In many cases, GaN power ICs are the enabling catalyst for advanced power-conversion topologies to transition from academic concepts to industry-proven mass production designs.

GaNSense Power IC

Navitas’ GaNSense family offers loss-less current sensing integrated in the IC, removing the shunt current-sense resistor and its associated headaches, such as improving the overall efficiency of the system with lower total series resistance, while also increasing robustness with fast, internal, 30-100ns short-circuit protection.

GaNSense Half-Bridge Power Ics

Half-Bridge Integration enables fastest switching, highest efficiency & power density using Soft-Switching topologies Ultra-fast mobile chargers continue to transition to higher power in order to support faster charging times for increasingly power-hungry smartphones. New charging protocols such as USB PD 3.1 now support up to 240 W. For these higher power levels, soft-switching half-bridge topologies provide the fastest switching frequency, highest power density and maximum efficiency.

GeneSiC Mosfet & Diode

Widest Range of SiC MOSFETs 750 V – 6.5 kV GeneSiC’s patented trench-assisted planar gate design is a no-compromise, next-generation solution; high-yield manufacturing, fast and cool operation, and extended, long-life reliability.

SiC Schottky MPS™ Diodes

Merged-PIN Schottky (MPS) Diodes combine two beneficial features from the PIN and Schottky diode. The PIN sustains excessive surge currents with low leakage, while the Schottky element offers low forward voltage drop and fast-switching characteristics. Target applications include PFC, Boost, and high-voltage, higher-power motor drives.